HL8506EFN03/4

The HL8506E family of E-Fuse are designed to protect circuitry on the output (OUT) from transients on power bus (IN) and large inrush current and protect the power bus from undesired output shorts and unexpected over-load condition. When the output ramps up, inrush current is limited by limiting the slew rate of output voltage. The slew rate is controlled by a small capacitor at SS pin. An internal small current source charges the SS pin external capacitor. The output voltage tracks the SS pin voltage with a constant ratio until internal power MOSFET is fully turned on. When user leaves SS pin floating, the output typical ramps up time is 0.4 ms. Current limit level can be set with an external resistor from ISET pin to the ground. An internal charge pump drives the gate of power MOSFET, allowing a very low on-resistance which is just 26 mΩ. When output current is over the current limit setting, the device regulates power MOSFET to clamp the output current at the setting level. The active of current limit circuit causes power consumption of the device increase. The thermal accumulation of the device may trigger the thermal shutdown, turning off power MOSFET. After the thermal shutdown, HL8506EFN01/03 will turn on the power MOSFET again when auto retry delay time (tTSD_dly) expires; HL8506EFN02/04 will latch off the power MOSFET unless power cycling input voltage or toggles EN pin. The output over-voltage event is limited by internal clamping circuits to a safe fixed maximum without external components. For over-voltage protection (OVP), the device provides for 12 V systems. HL8506E is available in a DFN-10L package with 3mm x 3mm size.

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- Commodity name: HL8506EFN03/4
- 产品名称: 12V Input Voltage 5A Continuous Load E-Fuse with Blocking FET Control
- 产品简介: The HL8506E family of E-Fuse are designed to protect circuitry on the output (OUT) from transients on power bus (IN) and large inrush current and protect the power bus from undesired output shorts and unexpected over-load condition. When the output ramps up, inrush current is limited by limiting the slew rate of output voltage. The slew rate is controlled by a small capacitor at SS pin. An internal small current source charges the SS pin external capacitor. The output voltage tracks the SS pin voltage with a constant ratio until internal power MOSFET is fully turned on. When user leaves SS pin floating, the output typical ramps up time is 0.4 ms. Current limit level can be set with an external resistor from ISET pin to the ground. An internal charge pump drives the gate of power MOSFET, allowing a very low on-resistance which is just 26 mΩ. When output current is over the current limit setting, the device regulates power MOSFET to clamp the output current at the setting level. The active of current limit circuit causes power consumption of the device increase. The thermal accumulation of the device may trigger the thermal shutdown, turning off power MOSFET. After the thermal shutdown, HL8506EFN01/03 will turn on the power MOSFET again when auto retry delay time (tTSD_dly) expires; HL8506EFN02/04 will latch off the power MOSFET unless power cycling input voltage or toggles EN pin. The output over-voltage event is limited by internal clamping circuits to a safe fixed maximum without external components. For over-voltage protection (OVP), the device provides for 12 V systems. HL8506E is available in a DFN-10L package with 3mm x 3mm size.
- Integrated 26 mΩ power FET
- 4.5 V - 13.8 V operating voltage range
- 16V maximum output over-voltage clamp
- Thermal fault protection
  - HL8506EFN01/03: auto retry
  - HL8506EFN02/04: latch off
- Reverse Current Blocking FET Control
  - HL8506EFN01/02: N/A
  - HL8506EFN03/04: Yes
- Programmable output ramps up rate
- Programmable UVLO
- Programmable, high accuracy current limit range from 1 A to 5 A
- Meet the IEC 62368 requirements (single point failure and Annex G.9)
- DFN-10L 3mm x 3mm
- Subtitle
  - Subtitle
- Server
- SSD
- POS
- USB Port

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